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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4448 1N4448 SIGNAL DIODE Absolute Maximum Ratings (Ta=25C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/C (25C) Forward Current IF 500 mA Junction Temp. Tj -65 to 175 C Storage Temp. Tstg -65 to 175 C Mechanical Data Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated 26 MIN Dimensions in millimeters Dimensions (DO-35) DO-35 26 MIN 0.457 DIA. 0.559 4.2 max. 2.0 DIA. max. Electrical Characteristics (Ta=25C) Ratings Minimum Breakdown Voltage IR= 5.0uA IR= 100uA Peak Forward Surge Current PW= 1sec. Maximum Forward Voltage IF= 100mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Symbol BV Ratings 75 100 1.0 1.0 Unit V IFsurge VF IR A V uA 0.025 5.0 50 Cj 4 trr 4 ns pF RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com |
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